This page is an archival copy for indexing and accessibility purposes. All figures have been removed to decrease the page size. See https://doi.org/10.1002/cta.2450 for the final version.

Characterizing BJTs using the Early voltage in the forward active mode

Luciano Da F. Costa, Filipi Nascimento Silva, Cesar H. Comin (ORCID)

International Journal of Circuit Theory and Applications, 46(4): 978-986. . DOI: 10.1002/cta.2450.

Abstract

Summary Bipolar junction transistors (BJTs) have been at the core of linear electronics from its beginnings. Here, we suggest an Early‐based inspired geometric model of BJT devices and its application to derive models of related electronic circuits (more specifically a common‐emitter configuration). The approach involves using a beam of isolines converging at the Early voltage as the model of a BJT. The angles of the isolines are experimentally verified often to vary almost linearly with the base current. A numerical methodology is suggested for the Early voltage estimation and applied to 12 real‐world small signal NPN BJTs. Interesting results are obtained, including the identification of diverse Early voltage values for different BJT types and estimation of transfer functions.

Citation

@article{Costa2018Characterizing,
  title   = {Characterizing BJTs using the Early voltage in the forward active mode},
  author  = {Costa, Luciano Da F. and Silva, Filipi Nascimento and Comin, Cesar H.},
  journal = {International Journal of Circuit Theory and Applications},
  year    = {2018},
  volume  = {46},
  number  = {4},
  pages   = {978--986},
  doi     = {10.1002/cta.2450}
}